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SUM90N10-8m2P
Vishay Siliconix
N Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
?
TrenchFET ? Power MOSFETS
90
V (BR)DSS (V)
100
R DS(on) ( ? )
0.0082 at V GS = 10 V
I D (A)
d
Q g (Typ)
97
?
?
175 °C Junction Temperature
100 % R g and UIS Tested
RoHS
COMPLIANT
?
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Power Supply
- Secondary Synchronous Rectification
TO-263
? Industrial
? Primary Switch
D
G
D
S
G
Top V ie w
Orderin g Information: SUM90 N 10- 8 m2P-E3 (Lead (P b )-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
100
± 20
Unit
V
Single Avalanche Energy
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Avalanche Current
a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 70 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C c
I D
I DM
I AS
E AS
P D
T J , T stg
90 d
90 d
240
60
180
300 b
3.75
- 55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
c
R thJA
R thJC
40
0.5
°C/W
Notes:
a. Duty cycle ? 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74643
S12-0335-Rev. B, 13-Feb-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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